Process for growing a carbon film

Details Process for growing a carbon film Process for growing a carbon film

2006-07-04

2006-07-04

Kunemund, Robert (Department: 1765)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

C117S094000, C117S095000, C117S097000, C117S929000

Reexamination Certificate

active

07070651

ABSTRACT:
A film (carbon and/or diamond) for a field emitter device, which may be utilized within a computer display, is produced by a process utilizing etching of a substrate and then depositing the film. The etching step creates nucleation sites on the substrate for the film deposition process. With this process patterning of the emitting film is avoided. A field emitter device can be manufactured with such a film.

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Mi-Young Jung et al., “Fabrication of a nanosize Si-tip coated with a thin diamond-like carbon film,”Thin Solid Films,1997, pp. 157-159.

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