Process for forming epitaxial BaF.sub.2 on GaAs

Details Process for forming epitaxial BaF.sub.2 on GaAs Process for forming epitaxial BaF.sub.2 on GaAs

1995-05-31

1997-11-25

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117108, 117940, C30B 2518

Patent

active

056907370

ABSTRACT:
A process for growing single crystal epitaxial BaF.sub.2 layers on gallium rsenide substrates by slowly reacting Ba, BaCl.sub.2, Bal.sub.2, BaBr.sub.2, BaF.sub.2 .cndot.BaCl.sub.2, BaF.sub.2 .cndot.BaBr.sub.2, BaF.sub.2 .cndot.BaI.sub.2, BaCl.sub.2 .cndot.BaBr.sub.2, Ba.sub.3 (GaF.sub.6).sub.2, BAH.sub.2, or BaO.sub.2 vapor with a clean, hot GaAs substrate at 500.degree. C. to 700.degree. C. in high vacuum until a uniform, thin (.about.12 .ANG.) layer of reaction product is formed and then vapor depositing BaF.sub.2 onto the reaction layer at room temperature to 400.degree. C. to form the single crystal, epitaxial BaF.sub.2 layer.

REFERENCES:
patent: 5225561 (1993-07-01), Kirlin et al.
patent: 5280012 (1994-01-01), Kirlin et al.
patent: 5435264 (1995-07-01), Santiago et al.
patent: 5453494 (1995-09-01), Kirlin et al.

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