Process for growing a film epitaxially upon a MgO surface

Details Process for growing a film epitaxially upon a MgO surface Process for growing a film epitaxially upon a MgO surface

1995-09-18

1997-12-02

Garrett, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

Using an energy beam or field, a particle beam or field, or...

427250, 117937, C30B 2502

Patent

active

056931409

ABSTRACT:
A process and structure wherein optical quality perovskites, such as BaTiO.sub.3 or SrTiO.sub.3, are grown upon a single crystal MgO substrate involves the epitaxial build up of alternating planes of TiO.sub.2 and metal oxide wherein the first plane grown upon the MgO substrate is a plane of TiO.sub.2. The layering sequence involved in the film build up reduces problems which would otherwise result from the interfacial electrostatics at the first atomic layers, and these oxides can be stabilized as commensurate thin films at a unit cell thickness or grown with high crystal quality to thicknesses of 0.5-0.7 .mu.m for optical device applications.

REFERENCES:
patent: 3655429 (1972-04-01), DeKlerk
patent: 4996187 (1991-02-01), Chai
patent: 5030613 (1991-07-01), Chai
patent: 5225031 (1993-07-01), McKee et al.
patent: 5258364 (1993-11-01), Yamazaki
patent: 5318799 (1994-06-01), Schulten et al.
patent: 5323023 (1994-06-01), Fork
patent: 5323024 (1994-06-01), Adams
"Catalysis"; Mink; Mikrochimica Acta (1987) vol. 3, No. 1-6, pp. 63-79.
"Intrinsic and Defect Surface States on Single Crystal Metal Oxides"; Henrich, et al; J. Vac. Sci., Technol. (1981), 18(2), pp. 416-419.

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