Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent
1996-03-22
2000-01-11
Utech, Benjamin
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
117 92, 117 93, 427561, 427596, C30B 2502, B23K 2612
Patent
active
060131306
ABSTRACT:
Layers of compound semiconductor 60 are grown epitaxially on a substrate 40. One or more components 24 are removed from a target 14 by a supply of energy 18, and reacted with gas surrounding the target. The gas stream conveys the components through a nozzle 34 to achieve a uniform layer on the substrate.
REFERENCES:
patent: 3979271 (1976-09-01), Noreika et al.
patent: 4788082 (1988-11-01), Schmitt
patent: 5015492 (1991-05-01), Venkatesan et al.
patent: 5158931 (1992-10-01), Noda et al.
patent: 5164040 (1992-11-01), Eres et al.
patent: 5254832 (1993-10-01), Gartner et al.
patent: 5279869 (1994-01-01), Doll et al.
patent: 5324552 (1994-06-01), Opower et al.
patent: 5534314 (1996-07-01), Wadley et al.
Ghandi, Sorab K, "VSLI Fabrication Principles--Silicon and Gallium Arsenide", 2nd Ed. (New York: Wiley-Interscience): 514-517, 1994.
Meng et al., "Epitaxal Growth of Aluminum Nitride on Si(111) by Reactive Sputtering," Applied Physics, Letter 59(17), Oct. 1991, pp. 2097-2098.
Kamiyama, Masahide, Editor-in-Chief, Thin Film Handbook, Ohm Sha, Publisher, Oct. 1983.
Dieter Ralph
Opower Hans
Weyer Heinrich
Champagne Donald L.
Deutsche Forschungsanstalt fuer Luft - und Raumfahrt e.V.
Hoppin Ralph F.
Lipsitz Barry R.
Utech Benjamin
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