LandOfFree - US Patents - Listing for Single-crystal, oriented-crystal, and epitaxy growth processes; ,Forming from vapor or gaseous state

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Gallium arsenide semiconductor devices fabricated with...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

GaN bulk growth by Ga vapor transport

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

GaN selective growth on SiC substrates by ammonia-source MBE

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

GaN single crystal

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

GaN system compound semiconductor and method for growing...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Gas diffusion electrodes, membrane-electrode assemblies and...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Gas diffusion electrodes, membrane-electrode assemblies and...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Using an energy beam or field – a particle beam or field – or...

Generic process for preparing a crystalline oxide upon a group I

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Group II-VI semiconductor laser and method for the manufacture t

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Group III nitride compound semiconductor device and...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

Group III nitride crystal substrate, method of its...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Forming a platelet shape or a small diameter – elongate,...

Group III-nitride crystal, manufacturing method thereof,...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Including change in a growth-influencing parameter

Group III-nitride thin films grown using MBE and bismuth

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With pretreatment or preparation of a base

Group III-V nitride semiconductor growth method and vapor...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Growing method of gallium nitride related compound semiconductor

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Grown diamond mosaic separation

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With a step of measuring – testing – or sensing

Growth method by repeatedly measuring flux in MBE chamber

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Growth of a single-crystal region of a III-V compound on a...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

Growth of bulk single crystals of aluminum nitride