Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Using an energy beam or field – a particle beam or field – or...
Patent
1993-12-21
1997-04-01
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
Using an energy beam or field, a particle beam or field, or...
117929, 20419211, C30B 2904
Patent
active
056161794
ABSTRACT:
A process for depositing amorphous or nanophase diamondlike carbon (DLC) and a-C:H carbon/hydrogen films with variable and controllable properties on the surface of a substrate is disclosed. The process utilizes a combined hydrocarbon ion beam and plasma-activated hydrocarbon gaseous radical flux produced by an end-Hall ion source to yield a film with good electron-emissivity characteristics or high hardness and good optical transparency, as desired. A second ion source providing a beam of argon ions above or together in nitrogen is optionally directed at the substrate for cleaning prior to deposition and for ion-assisted deposition during deposition or for doping.
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Baldwin David A.
Michel Stephen L.
Commonwealth Scientific Corporation
Kunemund Robert
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