Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Using an energy beam or field – a particle beam or field – or...
Patent
1993-07-06
1996-01-09
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
Using an energy beam or field, a particle beam or field, or...
117109, 117944, 427255, 4272553, 148 33, C30B 2514
Patent
active
054820030
ABSTRACT:
A process and structure involving a silicon substrate utilize molecular beam epitaxy (MBE) and/or electron beam evaporation methods and an ultra-high vacuum facility to grow a layup of epitaxial alkaline earth oxide films upon the substrate surface. By selecting metal constituents for the oxides and in the appropriate proportions so that the lattice parameter of each oxide grown closely approximates that of the substrate or base layer upon which oxide is grown, lattice strain at the film/film or film/substrate interface of adjacent films is appreciably reduced or relieved. Moreover, by selecting constituents for the oxides so that the lattice parameters of the materials of adjacent oxide films either increase or decrease in size from one parameter to another parameter, a graded layup of films can be grown (with reduced strain levels therebetween) so that the outer film has a lattice parameter which closely approximates that of, and thus accomodates the epitaxial growth of, a pervoskite chosen to be grown upon the outer film.
REFERENCES:
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patent: 4592927 (1986-06-01), Stall
patent: 4927670 (1990-05-01), Erbill
patent: 5225031 (1993-07-01), McKee
McKee et al., "Molecular Beam Epitaxy Growth of Epitaxial Barium Silicide, Barium Oxide . . . On Silicon", Appl. Phys. Lett. 59(7) Aug. 12, 1991 pp. 782-784.
McKee Rodney A.
Walker Frederick J.
Craig George L.
Kunemund Robert
Martin Marietta Energy Systems Inc.
McKee Michael E.
Spicer James M.
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