LandOfFree - US Patents - Listing for Single-crystal, oriented-crystal, and epitaxy growth processes; ,Forming from vapor or gaseous state

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

Acicular silicon crystal and process for producing the same

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

ALD method and apparatus

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Alignment techniques for epitaxial growth processes

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Alkaline-earth metal silicides on silicon

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Using an energy beam or field – a particle beam or field – or...

Aluminum metallization for sige devices

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Aluminum-containing material and atomic layer deposition...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Ammonia for use in manufacture of GaN-type compound...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Anneal of epitaxial layer in a semiconductor device

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Apparatus and method for achieving growth-etch deposition of dia

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

Apparatus and method for depositing semi conductor film

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

Apparatus and method for determining an epitaxial layer thicknes

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Apparatus and method for diamond production

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Apparatus and method for diamond production

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Apparatus and method for fabrication of photonic crystals

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Apparatus and method for fast-cycle atomic layer deposition

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With pretreatment or preparation of a base

Apparatus and method for forming I-III-VI.sub.2 thin-film layers

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

Apparatus and method for growing semiconductor crystal

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Apparatus and method for growth of a thin film

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Apparatus and method for growth of a thin film