Process for forming deposited film by use of alkyl aluminum hydr

Details Process for forming deposited film by use of alkyl aluminum hydr Process for forming deposited film by use of alkyl aluminum hydr

1997-10-10

1998-10-20

Garrett, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

C30B 2502

Patent

active

058241507

ABSTRACT:
A process and apparatus for forming an Al film of good quality according to the CVD method utilizing the reaction between alkyl aluminum hydride and hydrogen, which is an excellent deposited film formation process also capable of selective deposition of Al. Pressure in a deposition chamber is maintained from 10.sup.-3 to 760 Torr. Alkyl aluminum hydride and hydrogen gas are introduced at a partial pressure from 1.5.times.10.sup.-5 to 1.3.times.10.sup.-3 of the pressure in the chamber. Aluminum is deposited on a substrate in the chamber by heating the substrate sufficiently to decompose the alkyl aluminum hydride.

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