Process for forming epitaxial BaF.sub.2 on GaAs

Details Process for forming epitaxial BaF.sub.2 on GaAs Process for forming epitaxial BaF.sub.2 on GaAs

1994-05-19

1995-07-25

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117108, 117940, C30B 2518

Patent

active

054352649

ABSTRACT:
A process for growing single crystal epitaxial BaF.sub.2 layers on gallium arsenide substrates by slowly reacting BaF.sub.2 vapor with the clean, hot GaAs substrate at 500.degree. to 700.degree. C. in high vacuum until a uniform, thin (.about.12.ANG.) layer of reaction product is formed and then vapor depositing BaF.sub.2 onto the reaction layer at room temperature to 400.degree. C. to form the single crystal, epitaxial BaF.sub.2 layer.

REFERENCES:
patent: 4368098 (1983-01-01), Manasevit
patent: 4404265 (1983-09-01), Manasevit
Clemens et al., "Growth of BaF.sub.2 and of BaF.sub.2 /SrF.sub.2 layers on 001) oriented GaAs", J. Appl. Phys, vol. 66, No. 4, 15 Aug. 1989, pp. 1680-1685.
Truscott et al., "MBE Growth of BaF.sub.2 /(Ga,In)(As,Sb) Structures", Journal of Crystal Growth, vol. 81 (1987) pp. 552-556.
Chaudhari et al., "Calcium fluoride thin films on GaAs (100) for possible metal-insulator-semiconductor applications", Appl. Phys. Lett., vol. 62, No. 8, 22 Feb. 1993, pp. 852-854.
Hung, et al., "Epitaxial growth of alkaline earth fluoride films on HF-treated Si and (NH.sub.4).sub.2 Sx-treated GaAs without in situ cleaning", Appl. Phys. Lett. vol. 60, No. 2, 13 Jan. 1992, pp. 201-203.

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