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Borderless vias without degradation of HSQ gap fill layers

Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
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Borderless vias without degradation of HSQ gap fill layers

Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
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Boride electrodes and barriers for cell dielectrics

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
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Boride-based substrate for growing semiconducting layers...

Semiconductor device manufacturing: process – Making passive device – Resistor
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Boron diffusion barrier by nitrogen incorporation in spacer...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
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Boron difluoride plasma doping method for forming...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having schottky gate
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Boron doping a semiconductor particle

Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Diffusing a dopant
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Boron incorporated diffusion barrier material

Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
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Boron incorporated diffusion barrier material

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
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Boron incorporated diffusion barrier material

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
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Boron incorporated diffusion barrier material

Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
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Boron ion delivery system

Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Plasma
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Boron penetration to suppress short channel effect in P-channel

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
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Boron phosphide-based semiconductor layer and vapor phase...

Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
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Boron-carbide and boron rich rhobohedral based transistors...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having schottky gate
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Boron-doped amorphous carbon film for use as a hard etch...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
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Boron-doped nanocrystalline diamond

Semiconductor device manufacturing: process – Having diamond semiconductor component
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Boron-doped p-type single crystal silicon carbide semiconductor

Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate
Patent

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Borophosphosilicate glass incorporated with fluorine for low the

Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
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Bottom electrode chemically-bonded Langmuir-Blodgett films...

Semiconductor device manufacturing: process – Having organic semiconductive component
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