Boron penetration to suppress short channel effect in P-channel

Details Boron penetration to suppress short channel effect in P-channel Boron penetration to suppress short channel effect in P-channel

1995-04-18

1997-08-26

Niebling, John

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438289, H01L 21265

Patent

active

056610599

ABSTRACT:
A method for forming a set of p-channel devices with enhanced n-doping and penetration of boron into the channel region between the source and drain regions, thereby creating channel length independent p-channel threshold voltage behavior. Long channel and short channel transistors have approximately equal threshold voltages as (a) short channel effect is reduced with increased n-doping in short channel transistors (where boron penetration has little effect), and (b) the effects of boron penetration and increased n-doping are offset in longer channel transistors.

REFERENCES:
patent: 4587709 (1986-05-01), Fowler et al.
patent: 4701423 (1987-10-01), Szluk
patent: 5091324 (1992-02-01), Hsu et al.
patent: 5407849 (1995-04-01), Khambaty et al.
patent: 5548143 (1996-08-01), Lee

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