Boron doping a semiconductor particle

Details Boron doping a semiconductor particle Boron doping a semiconductor particle

1995-12-11

1998-06-09

Chaudhari, Chandra

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Diffusing a dopant

438567, H01L 2122

Patent

active

057633207

ABSTRACT:
A method (10,30) of boron doping a semiconductor particle using boric acid to obtain a p-type doped particle. Either silicon spheres or silicon powder is mixed with a diluted solution of boric acid having a predetermined concentration. The spheres are dried (16), with the boron film then being driven (18) into the sphere. A melt procedure mixes the driven boron uniformly throughout the sphere. In the case of silicon powder, the powder is metered out (38) into piles and melted/fused (40) with an optical furnace. Both processes obtain a p-type doped silicon sphere with desired resistivity. Boric acid is not a restricted chemical, is inexpensive, and does not pose any special shipping, handling, or disposal requirements.

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patent: 5556791 (1996-09-01), Stevens et al.
Appl. 08/570,028 Filed Dec. 11, 1995 by Stevens et al.

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