Borderless vias without degradation of HSQ gap fill layers

Details Borderless vias without degradation of HSQ gap fill layers Borderless vias without degradation of HSQ gap fill layers

1997-12-18

1999-09-28

Utech, Benjamin

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438625, 438714, 438631, H01L 21312

Patent

active

059587989

ABSTRACT:
Spin-on HSQ is employed to gap fill patterned metal layers in manufacturing ultra high density, multi-metal layer semiconductor devices. The degradation of deposited HSQ layers during formation of borderless vias, as from photoresist stripping using an O.sub.2 -containing plasma, is significantly reduced or prevented by including hydrogen in the stripping plasma. Embodiments include stripping in a plasma containing a sufficient amount of a forming gas (H.sub.2 /N.sub.2) to prevent reduction of the number of Si--H bonds of the deposited HSQ gap fill layer below about 70%, before and after solvent cleaning.

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