Boron-doped p-type single crystal silicon carbide semiconductor

Details Boron-doped p-type single crystal silicon carbide semiconductor Boron-doped p-type single crystal silicon carbide semiconductor

1996-08-28

2000-10-17

Bowers, Charles

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

438542, 438931, 423345, 423346, H01L 2120, C01B 3136

Patent

active

061331201

ABSTRACT:
A p-type silicon carbide semiconductor having a high carrier concentration and activation rate is provided by doping boron as an acceptor impurity in a single crystal silicon carbide. The boron occupies silicon sites in a crystal lattice of the single crystal silicon carbide.

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