Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-09-18
2007-09-18
Coleman, David W. (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257SE21584
Reexamination Certificate
active
11119370
ABSTRACT:
A diffusion barrier layer comprising TiNxByis disclosed for protection of gate oxide layers in integrated transistors. The diffusion barrier layer can be fabricated by first forming a TiN layer and then incorporating boron into the TiN layer. The diffusion barrier layer can also be fabricated by forming a TiNxBylayer using a TDMAT process including boron. The diffusion barrier layer can also be fabricated by forming a TiNxBylayer using a CVD process. The diffusion barrier layer is of particular utility in conjunction with tungsten or tungsten silicide conductive layers formed by CVD.
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Agarwal Vishnu K.
Sandhu Gurtej S.
Coleman David W.
Micro)n Technology, Inc.
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