Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2006-11-07
2006-11-07
Sarkar, Asok K. (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C438S591000, C438S791000, C257SE21626
Reexamination Certificate
active
07132353
ABSTRACT:
A method of forming a sidewall spacer on a gate electrode is described. The method includes generating a first plasma from a silicon containing precursor and oxide precursor, and forming a silicon oxy-nitride layer on the sidewall of the gate electrode. The method also includes generating a second plasma from the silicon containing precursor and a nitrogen precursor, and forming a nitride layer on the silicon oxy-nitride layer. The silicon containing precursor can flow continuously between the generation of the first and the second plasmas. Also, a method of forming a sidewall spacer on the side of a gate electrode on a substrate. The method includes forming an oxy-nitride layer on the sidewall, and forming a nitride layer on the oxy-nitride layer, where the substrate wafer is not exposed to air between the formation of the layers.
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Bhatia Ritwik
Kim Troy
Shek Mei-Yee
Xia Li-Qun
Zubkov Vladamir
Sarkar Asok K.
Townsend and Townsend / and Crew LLP
Yevsikov Victor V.
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