Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Plasma
Reexamination Certificate
2007-07-03
2007-07-03
Smith, Zandra V. (Department: 2822)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Plasma
C438S514000, C250S492210
Reexamination Certificate
active
10667277
ABSTRACT:
A boron ion plasma, generated by use of a cathodic arc, is manipulated and delivered to a large flat product such as a silicon wafer with boron ion energies suitable for incorporation of boron atoms into solid state devices as one of the key steps in manufacturing solid state electronics and with uniformity of boron dose over the area suitable for the scale of manufacturing desired.
REFERENCES:
patent: 3960605 (1976-06-01), Beck et al.
patent: 4318213 (1982-03-01), Blount
patent: 4371587 (1983-02-01), Peters
patent: 4415916 (1983-11-01), Protic et al.
patent: 4676847 (1987-06-01), Lin
patent: 4682564 (1987-07-01), Cann
patent: 4692998 (1987-09-01), Armstrong et al.
patent: 4791005 (1988-12-01), Becker et al.
patent: 5037767 (1991-08-01), Daniel
patent: 5198373 (1993-03-01), Yoshino
patent: 5199994 (1993-04-01), Aoki
patent: 5517084 (1996-05-01), Leung
patent: 5558718 (1996-09-01), Leung
patent: 5598025 (1997-01-01), Murakoshi et al.
patent: 5672541 (1997-09-01), Booske et al.
patent: 5709745 (1998-01-01), Larkin et al.
patent: 5763320 (1998-06-01), Stevens et al.
patent: 5866472 (1999-02-01), Moslehi
patent: 5885904 (1999-03-01), Mehta et al.
patent: 5913131 (1999-06-01), Hossain et al.
patent: 5964943 (1999-10-01), Stein et al.
patent: 5977552 (1999-11-01), Foad
patent: 6090590 (2000-07-01), Kao
patent: 6097079 (2000-08-01), Hossain et al.
patent: 6133120 (2000-10-01), Miyajima et al.
patent: 6150248 (2000-11-01), Sekiguchi et al.
patent: 6239440 (2001-05-01), Abbott
patent: 6300209 (2001-10-01), Oh
patent: 6380012 (2002-04-01), Chen et al.
patent: 6391694 (2002-05-01), Zhang et al.
patent: 6417031 (2002-07-01), Ohtani et al.
patent: 6436785 (2002-08-01), Brown et al.
patent: 6562418 (2003-05-01), Morrow et al.
patent: 6562705 (2003-05-01), Obara et al.
patent: 6904509 (2005-06-01), Chang
patent: 6905947 (2005-06-01), Goldberg
Brontek Delta Corporation
Hiney James W.
Perkins Pamela E
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