Boron-doped amorphous carbon film for use as a hard etch...

Details Boron-doped amorphous carbon film for use as a hard etch... Boron-doped amorphous carbon film for use as a hard etch...

2005-09-06

2005-09-06

Nguyen, Thanh (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S014000, C438S636000, C438S780000

Reexamination Certificate

active

06939794

ABSTRACT:
A hard mask comprising boron-doped amorphous carbon, and a method for forming the hard mask, provides improved resistance to etches of a variety of materials compared with previous amorphous carbon hard mask layers.

REFERENCES:
patent: 4675265 (1987-06-01), Kazama et al.
patent: 6333255 (2001-12-01), Sekiguchi
patent: 6424044 (2002-07-01), Han et al.
patent: 6469425 (2002-10-01), Sakai et al.
patent: 6750127 (2004-06-01), Chang et al.
patent: 2002/0088707 (2002-07-01), Towle

Affiliated with

Also associated with

Rating

Boron-doped amorphous carbon film for use as a hard etch... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Boron-doped amorphous carbon film for use as a hard etch..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Boron-doped amorphous carbon film for use as a hard etch... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3420456