Boron phosphide-based semiconductor layer and vapor phase...

Details Boron phosphide-based semiconductor layer and vapor phase... Boron phosphide-based semiconductor layer and vapor phase...

2005-01-25

2005-01-25

Thompson, Craig A. (Department: 2813)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C439S909000, C427S096400, C427S099300

Reexamination Certificate

active

06846754

ABSTRACT:
A vapor-phase growth method for forming a boron-phosphide-based semiconductor layer on a single-crystal silicon (Si) substrate in a vapor-phase growth reactor. The method includes preliminary feeding of a boron (B)-containing gas, a phosphorus (P)-containing gas, and a carrier gas for carrying these gases into a vapor-phase growth reactor to thereby form a film containing boron and phosphorus on the inner wall of the vapor-phase growth reactor; and subsequently vapor-growing a boron-phosphide-based semiconductor layer on a single-crystal silicon substrate. Also disclosed is a boron-phosphide-based semiconductor layer prepared by the vapor-phase growth method.

REFERENCES:
patent: 4214926 (1980-07-01), Katsuto et al.
patent: 6069021 (2000-05-01), Terashima et al.
patent: 6530992 (2003-03-01), Yang et al.
patent: 03-087019 (1991-04-01), None
patent: 04-084486 (1992-03-01), None

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