Borophosphosilicate glass incorporated with fluorine for low the

Details Borophosphosilicate glass incorporated with fluorine for low the Borophosphosilicate glass incorporated with fluorine for low the

1998-12-11

2000-12-12

Booth, Richard

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

438763, 438783, H01L 2131, H01L 21469

Patent

active

061598704

ABSTRACT:
A method of depositing a fluorinated borophosphosilicate glass (FBPSG) on a semiconductor device as either a final or interlayer dielectric film. Gaps having aspect ratios greater than 6:1 are filled with a substantially void-free FBPSG film at a temperature of about 480.degree. C. at sub-atmospheric pressures of about 200 Torr. Preferably, gaseous reactants used in the method comprise TEOS, FTES, TEPO and TEB with an ozone/oxygen mixture. Dopant concentrations of boron and phosphorus are sufficiently low such that surface crystallite defects and hygroscopicity are avoided. The as-deposited films at lower aspect ratio gaps are substantially void-free such that subsequent anneal of the film is not required. Films deposited into higher aspect ratio gaps are annealed at or below about 750.degree. C., well within the thermal budget for most DRAM, logic and merged logic-DRAM chips. The resultant FBPSG layer contains less than or equal to about 5.0 wt % boron, less than about 4.0 wt % phosphorus, and about 0.1 to 2.0 wt % fluorine.

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