Use of in-situ HCL etch to eliminate by oxidation...

Use of indium to define work function of p-type doped...

Use of mask shadowing and angled implantation in fabricating...

Use of MEV implantation to form vertically modulated N+ buried l

Use of sacrificial dielectric structure to form...

Use of selective epitaxial silicon growth in formation of...

Use of selective oxidation to form asymmetrical oxide...

Use of selective oxidation to form asymmetrical oxide...

Use of selective oxidation to improve LDMOS power transistors

Use of Si-rich oxide film as a chemical potential barrier...

Use of silicon germanium and other alloys as the replacement...

Using a first liner layer as a spacer in a semiconductor device

Using an extra boron implant to improve the NMOS reverse narrow

Using an organic layer as an ion implantation mask when forming

Using different gate dielectrics with NMOS and PMOS...

Using different gate dielectrics with NMOS and PMOS...

Using high temperature H2 anneal to recrystallize S/D and...

Using implanted poly-1 to improve charging protection in...

Using NO or N.sub.2 O treatment to generate different oxide thic

Using p-type halo implant as ROM cell isolation in flat-cell mas