Using different gate dielectrics with NMOS and PMOS...

Details Using different gate dielectrics with NMOS and PMOS... Using different gate dielectrics with NMOS and PMOS...

2006-06-13

2006-06-13

Kang, Donghee (Department: 2811)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S279000, C257S369000, C257S390000, C257S407000

Reexamination Certificate

active

07060568

ABSTRACT:
Complementary metal oxide semiconductor integrated circuits may be formed with NMOS and PMOS transistors having different gate dielectrics. The different gate dielectrics may be formed, for example, by a replacement process. The gate dielectrics may differ in material, thickness, or formation techniques, as a few examples.

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