Using p-type halo implant as ROM cell isolation in flat-cell mas

Details Using p-type halo implant as ROM cell isolation in flat-cell mas Using p-type halo implant as ROM cell isolation in flat-cell mas

1999-08-26

2000-06-20

Monin, Jr., Donald L.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438306, 438373, 438377, 438546, H01L 218236

Patent

active

06077746&

ABSTRACT:
A method for forming a p-type halo implant as ROM cell isolation in a flat-cell mask ROM process is described. A P-well is formed within a semiconductor substrate and an oxide layer is formed overlying a surface of the substrate. A photomask is formed overlying the oxide layer wherein openings are left within the photomask exposing portions of the oxide layer. First, ions are implanted through the exposed portions of the oxide layer into the underlying semiconductor substrate whereby buried bit lines are formed. Thereafter, second ions are implanted through the exposed portions of the oxide layer whereby halo regions are formed encompassing the buried bit lines. The halo regions provide ROM isolation and punch-through protection for the buried bit lines. Thereafter, the photomask is removed and fabrication of flat-cell mask ROM device is completed.

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