Use of selective epitaxial silicon growth in formation of...

Details Use of selective epitaxial silicon growth in formation of... Use of selective epitaxial silicon growth in formation of...

2006-12-26

2006-12-26

Dang, Trung (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S488000, C438S596000

Reexamination Certificate

active

07153741

ABSTRACT:
Methods and apparatus utilizing epitaxial silicon growth on a base structure of a floating gate of a floating-gate memory cell to increase the available coupling area of the floating gate while reducing the spacing between adjacent memory cells. The epitaxial silicon growth facilitates a reduction in spacing between adjacent cells beyond the capability of the patterning technology, e.g., photolithography.

REFERENCES:
patent: 5828080 (1998-10-01), Yano
patent: 6559008 (2003-05-01), Rabkin et al.
patent: 6743695 (2004-06-01), Lee et al.
patent: 6777741 (2004-08-01), Rabkin
patent: 2004/0152260 (2004-08-01), Rabkin

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