Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-08-08
2006-08-08
Owens, Douglas W (Department: 2811)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257S369000
Reexamination Certificate
active
07087476
ABSTRACT:
Complementary metal oxide semiconductor integrated circuits may be formed with NMOS and PMOS transistors having different gate dielectrics. The different gate dielectrics may be formed, for example, by a subtractive process. The gate dielectrics may differ in material, thickness, or formation techniques, as a few examples.
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Brask Justin K.
Chau Robert S.
Datta Suman
Doczy Mark L.
Kavalieros Jack
Intel Corporation
Owens Douglas W
Trop Pruner & Hu P.C.
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