Reducing gate dielectric material to form a metal gate...
Reducing leakage currents in memories with phase-change...
Reducing oxidation under a high K gate dielectric
Reducing photoresist layer degradation in plasma immersion...
Reducing poly-depletion through co-implanting carbon and...
Reducing reactions between polysilicon gate electrodes and...
Reducing secondary injection effects
Reducing the dielectric constant of a portion of a gate...
Reducing the formation of electrical leakage pathways during...
Reduction in well implant channeling and resulting latchup...
Reduction of a hot carrier effect by an additional furnace annea
Reduction of a hot carrier effect phenomena via use of transient
Reduction of channel hot carrier effects in transistor devices
Reduction of dopant diffusion by the co-implantation of impuriti
Reduction of dopant loss in a gate structure
Reduction of field edge thinning in peripheral devices
Reduction of field edge thinning in peripheral devices
Reduction of gate-induced drain leakage in semiconductor devices
Reduction of memory instability by local adaptation of...
Reduction of negative bias temperature instability using...