Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2008-10-27
2010-06-15
Smith, Zandra (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S232000, C438S305000, C438S585000, C438S587000, C438S592000
Reexamination Certificate
active
07736968
ABSTRACT:
A method for forming a semiconductor structure includes providing a semiconductor substrate; forming a gate dielectric layer over the semiconductor substrate; forming a gate electrode layer over the gate dielectric layer; doping carbon and nitrogen into the gate electrode layer; and, after the step of doping carbon and nitrogen, patterning the gate dielectric layer and the gate electrode layer to form a gate dielectric and a gate electrode, respectively.
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Chen Chien-Hao
Huang Chien-Hao
Hung Cheng-Lung
Ku Keh-Chiang
Lin Wenli
Duong Khanh B
Slater & Matsil L.L.P.
Smith Zandra
Taiwan Semiconductor Manufacturing Company , Ltd.
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