Reducing leakage currents in memories with phase-change...

Details Reducing leakage currents in memories with phase-change... Reducing leakage currents in memories with phase-change...

2011-03-15

2011-03-15

Fulk, Steven J (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S003000, C257SE21544

Reexamination Certificate

active

07906391

ABSTRACT:
A memory cell including a phase-change material may have reduced leakage current. The cell may receive signals through a buried wordline in one embodiment. The buried wordline may include a sandwich of a more lightly doped N type region over a more heavily doped N type region over a less heavily doped N type region. As a result of the configuration of the N type regions forming the buried wordline, the leakage current of the buried wordline to the substrate under reverse bias conditions may be significantly reduced.

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Quirk, Michael et al. Semiconductor Manufacturing Technology, 2001, Prentice-Hall, p. 626.

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