Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2004-06-24
2008-09-16
Baumeister, Bradley W. (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257SE21414
Reexamination Certificate
active
07425490
ABSTRACT:
In a metal gate replacement process, a gate electrode stack may be formed of a dielectric covered by a sacrificial metal layer covered by a polysilicon gate electrode. In subsequent processing of the source/drains, high temperature steps may be utilized. The sacrificial metal layer prevents reactions between the polysilicon gate electrode and the underlying high dielectric constant dielectric. As a result, adverse consequences of the reaction between the polysilicon and the high dielectric constant dielectric material can be reduced.
REFERENCES:
patent: 6033963 (2000-03-01), Huang et al.
patent: 6049114 (2000-04-01), Maiti et al.
patent: 6524901 (2003-02-01), Trivedi
patent: 6617209 (2003-09-01), Chau et al.
patent: 6709911 (2004-03-01), Doczy et al.
patent: 6830998 (2004-12-01), Pan et al.
patent: 2002/0142531 (2002-10-01), Hsu et al.
patent: 2005/0282341 (2005-12-01), Park et al.
patent: 02003244 (1990-01-01), None
U.S. Appl. No. 10/742,678, filed Dec. 19, 2003, Brask et al.,A Method For Making A Semiconductor Device With A Metal Gate Electrode That Is Formed On An Annealed High-K Gate Dielectric Layer.
Brask Justin K.
Chau Robert S.
Datta Suman
Doczy Mark L.
Kavalieros Jack
Anya Igwe U.
Baumeister Bradley W.
Intel Corporation
Trop Pruner & Hu P.C.
LandOfFree
Reducing reactions between polysilicon gate electrodes and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Reducing reactions between polysilicon gate electrodes and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Reducing reactions between polysilicon gate electrodes and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3991779