Reduction of memory instability by local adaptation of...

Details Reduction of memory instability by local adaptation of... Reduction of memory instability by local adaptation of...

2008-08-08

2010-10-12

Nguyen, Khiem D (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S305000, C257SE21632

Reexamination Certificate

active

07811876

ABSTRACT:
By appropriately locally controlling the conditions during a re-growth process in a memory region and a speed-critical device region, the creation of dislocation defects may be reduced in the memory region, thereby enhancing overall stability of respective memory cells. On the other hand, enhanced strain levels may be obtained in the speed-critical device region by performing an efficient amorphization process and re-crystallizing amorphized portions, for instance, in the presence of a rigid material to provide a desired high strain level.

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Translation of Official Communication from German Patent Office for German Patent Application No. 10 2008 011 931.8 dated Dec. 9, 2008.

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