Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-11-14
2006-11-14
Smith, Matthew (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S305000, C257S344000, C257SE21435, C257SE21437
Reexamination Certificate
active
07135373
ABSTRACT:
A transistor can be fabricated to exhibit reduced channel hot carrier effects. According to one aspect of the present invention, a method for fabricating a transistor structure includes implanting a first dopant into a lightly doped drain (LDD) region to form a shallow region therein. The first dopant penetrates the substrate to a depth that is less than the LDD junction depth. A second dopant is implanted into the substrate beyond the LDD junction depth to form a source/drain region. The implantation of the second dopant overpowers a substantial portion of the first dopant to define a floating ring in the LDD region that mitigates channel hot carrier effects.
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Hao Pinghai
Pan Shanjen
Pendharkar Sameer
Brady III Wade James
Nguyen Khiem
Smith Matthew
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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