Reduction of dopant loss in a gate structure

Details Reduction of dopant loss in a gate structure Reduction of dopant loss in a gate structure

2007-10-02

2007-10-02

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S595000

Reexamination Certificate

active

10681399

ABSTRACT:
A semiconductor device includes offset spacers that contact opposing side surfaces of a gate of a gate structure. The offset spacers can be formed by selectively depositing an oxide layer over the gate and the semiconductor substrate so that the opposing side surfaces of the gate e are substantially free of the oxide layer. Offset spacers can then be formed that contact the opposing side surfaces of the gate.

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