Reducing oxidation under a high K gate dielectric

Details Reducing oxidation under a high K gate dielectric Reducing oxidation under a high K gate dielectric

2008-06-17

2008-06-17

Wilczewski, M. (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S287000, C438S591000, C438S696000, C438S725000, C438S781000

Reexamination Certificate

active

07387927

ABSTRACT:
A metal layer is formed on a dielectric layer, which is formed on a substrate. After forming a masking layer on the metal layer, the exposed sides of the dielectric layer are covered with a polymer diffusion barrier.

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