Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-06-28
2011-06-28
Lindsay, Jr., Walter L (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S231000, C438S306000, C438S527000, C438S529000, C438S725000, C257SE21256, C257SE21337
Reexamination Certificate
active
07968401
ABSTRACT:
A method of plasma immersion ion implantation of a workpiece having a photoresist mask on its top surface prevents photoresist failure from carbonization of the photoresist. The method includes performing successive ion implantation sub-steps, each of the ion implantation sub-steps having a time duration over which only a fractional top portion of the photoresist layer is damaged by ion implantation. After each one of the successive ion implantation sub-steps, the fractional top portion of the photoresist is removed while leaving the remaining portion of the photoresist layer in place by performing an ashing sub-step. The number of the successive ion implantation sub-steps is sufficient to reach a predetermined ion implantation dose in the workpiece.
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Foad Majeed A.
Hilkene Martin A.
Porshnev Peter I.
Santhanam Kartik
Ta Yen B.
Applied Materials Inc.
Lindsay, Jr. Walter L
Pompey Ron
Wallace Robert M.
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