LandOfFree - US Patents - Listing for Active solid-state devices (e.g., transistors, solid-state diode

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Group III nitride semiconductor device and its method of...

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – With lattice constant mismatch

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Group III nitride semiconductor device of field effect...

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor

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Group III nitride semiconductor device, epitaxial substrate,...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular dopant concentration or concentration profile

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Group III nitride semiconductor laser device

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure

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Group III nitride semiconductor light emitting device

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Heterojunction formed between semiconductor materials which...

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Group III nitride semiconductor light emitting device,...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure

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Group III nitride semiconductor light-emitting device and...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction

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Group III nitride semiconductor light-emitting device having...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular dopant concentration or concentration profile

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Group III nitride semiconductor light-emitting device,...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction

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Group III nitride semiconductor optical device

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material

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Group III nitride semiconductor substrate and method for...

Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than...

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Group III nitride substrate, semiconductor device comprising...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular dopant concentration or concentration profile

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Group III nitride-based compound semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With specified crystal plane or axis

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Group III nitride-based compound semiconductor...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction

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Group III-nitride based resonant cavity light emitting...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...

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Group III-nitride growth on Si substrate using oxynitride...

Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Ii-vi compound

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Group III-nitride growth on silicon or silicon germanium...

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Light responsive structure

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Group III-nitride light emitting device

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure

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Group III-nitride light emitting device

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material

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Group III-nitride on Si using epitaxial BP buffer layer

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material

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