Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Heterojunction formed between semiconductor materials which...
Reexamination Certificate
2005-05-20
2008-11-25
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Heterojunction formed between semiconductor materials which...
C257S615000, C257S745000, C257SE21085, C257SE21127
Reexamination Certificate
active
07456445
ABSTRACT:
A Group III nitride semiconductor light emitting device having a light emitting layer (6) bonded to a crystal layer composed of an n-type or p-type Group III nitride semiconductor, the Group III nitride semiconductor light emitting device being characterized by comprising an n-type Group III nitride semiconductor layer (4) having germanium (Ge) added thereto and having a resistivity of 1×10−1to 1×10−3Ωcm. The invention provides a Ge-doped n-type Group III nitride semiconductor layer with low resistance and excellent flatness, in order to obtain a Group III nitride semiconductor light emitting device exhibiting low forward voltage and excellent light emitting efficiency.
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Horikawa Syunji
Takeda Hitoshi
Pert Evan
Showa Denko K.K.
Sughrue & Mion, PLLC
Wilson Scott R
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