Group III nitride semiconductor light emitting device

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Heterojunction formed between semiconductor materials which...

Reexamination Certificate

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C257S615000, C257S745000, C257SE21085, C257SE21127

Reexamination Certificate

active

07456445

ABSTRACT:
A Group III nitride semiconductor light emitting device having a light emitting layer (6) bonded to a crystal layer composed of an n-type or p-type Group III nitride semiconductor, the Group III nitride semiconductor light emitting device being characterized by comprising an n-type Group III nitride semiconductor layer (4) having germanium (Ge) added thereto and having a resistivity of 1×10−1to 1×10−3Ωcm. The invention provides a Ge-doped n-type Group III nitride semiconductor layer with low resistance and excellent flatness, in order to obtain a Group III nitride semiconductor light emitting device exhibiting low forward voltage and excellent light emitting efficiency.

REFERENCES:
patent: 2005/0127394 (2005-06-01), Nagahama et al.
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patent: 2000-332364 (2000-11-01), None
patent: 2003-229645 (2003-08-01), None
patent: 2004-140020 (2004-05-01), None

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