Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Reexamination Certificate
2005-03-10
2009-08-18
Ngo, Ngan (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
C257S103000, C257SE33025, C257SE33030, C438S046000, C438S047000
Reexamination Certificate
active
07576365
ABSTRACT:
A Group III nitride semiconductor light-emitting device having a stacked structure includes a transparent crystal substrate having a front surface and a back surface, a first Group III nitride semiconductor layer of first conductive type formed on the front surface of the transparent crystal substrate, a second Group III nitride semiconductor layer of second conductive type which is opposite from the first conductive type, a light-emitting layer made of a Group III nitride semiconductor between the first and second Group III nitride semiconductor layers, and a plate body including fluorescent material, attached onto the back surface of the transparent crystal substrate.
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Kusunoki Katsuki
Mitani Kazuhiro
Udagawa Takashi
Ngo Ngan
Showa Denko K.K.
Sughrue & Mion, PLLC
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