Group III-nitride on Si using epitaxial BP buffer layer

Details Group III-nitride on Si using epitaxial BP buffer layer Group III-nitride on Si using epitaxial BP buffer layer

2005-11-22

2005-11-22

Crane, Sara (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular semiconductor material

C257S190000, C438S046000

Reexamination Certificate

active

06967355

ABSTRACT:
A semiconductor device and method for forming the same includes a silicon (111) single crystal substrate, and an epitaxial boron phosphide (BP) layer disposed on the substrate. A group III-nitride semiconductor epitaxial layer is disposed on the BP epitaxial layer.

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