Group III nitride semiconductor optical device

Details Group III nitride semiconductor optical device Group III nitride semiconductor optical device

2005-09-15

2010-06-22

Soward, Ida M (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular semiconductor material

C257S011000, C257S012000, C257S013000, C257S014000, C257S015000, C257S021000, C257S022000, C257S189000, C257SE33026, C257SE33030, C257SE33031, C257SE33033

Reexamination Certificate

active

07741654

ABSTRACT:
The present invention provides a semiconductor laser excellent in the current injection efficiency. In an inner stripe type semiconductor laser according to the present invention, a p type cladding layer309has a superlattice structure composed of GaN layers and Al0.1Ga0.9N layers, which are alternately layered on each other. The p type cladding layer309has a portion of high dislocation density and a portion of low dislocation density. That is, the dislocation density is relatively low in a region directly above an opening of the current-confining region308, whereas the dislocation density is relatively high in a region directly above a current-confining region308.

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