Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Light responsive structure
Reexamination Certificate
2011-04-19
2011-04-19
Cao, Phat X (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Light responsive structure
C257SE33049, C372S050110
Reexamination Certificate
active
07928471
ABSTRACT:
A structure including a Si1-xGexsubstrate and a distributed Bragg reflector layer disposed directly onto the substrate. The distributed Bragg reflector layer includes a repeating pattern that includes at least one aluminum nitride layer and a second layer having the general formula AlyGa1-yN. Another aspect of the present invention is various devices including this structure. Another aspect of the present invention is directed to a method of forming such a structure comprising providing a Si1-xGexsubstrate and depositing a distributed Bragg reflector layer directly onto the substrate. Another aspect of the present invention is directed to a photodetector or photovoltaic cell device, including a Si1-xGexsubstrate device, a group III-nitride device and contacts to provide a conductive path for a current generated across at least one of the Si1-xGexsubstrate device and the group III-nitride device upon incident light.
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Akbar Shahzad
Eddy, Jr. Charles R.
Mastro Michael A.
Cao Phat X
Garrity Diana C
Grunkemeyer Joseph T.
Ressing Amy L
The United States of America as represented by the Secretary of
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