Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular dopant concentration or concentration profile
Reexamination Certificate
2010-02-26
2010-12-14
Soward, Ida M (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular dopant concentration or concentration profile
C257S022000, C257S102000, C257S103000, C257S189000, C257S201000, C257SE33025, C257SE33028, C257SE33030, C257SE33033, C257SE33034
Reexamination Certificate
active
07851821
ABSTRACT:
A group III nitride semiconductor device having a gallium nitride based semiconductor film with an excellent surface morphology is provided. A group III nitride optical semiconductor device11aincludes a group III nitride semiconductor supporting base13, a GaN based semiconductor region15, an active layer active layer17, and a GaN semiconductor region19. The primary surface13aof the group III nitride semiconductor supporting base13is not any polar plane, and forms a finite angle with a reference plane Sc that is orthogonal to a reference axis Cx extending in the direction of a c-axis of the group III nitride semiconductor. The GaN based semiconductor region15is grown on the semipolar primary surface13a. A GaN based semiconductor layer21of the GaN based semiconductor region15is, for example, an n-type GaN based semiconductor, and the n-type GaN based semiconductor is doped with silicon. A GaN based semiconductor layer23of an oxygen concentration of 5×1016cm−3or more provides an active layer17with an excellent crystal quality, and the active layer17is grown on the primary surface of the GaN based semiconductor layer23.
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Akita Katsushi
Enya Yohei
Kyono Takashi
Nakamura Takao
Sumitomo Takamichi
Sartori Michael A.
Soward Ida M
Sumitomo Electric Industries Ltd.
Venable LLP
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