Group III nitride semiconductor light emitting device,...

Details Group III nitride semiconductor light emitting device,... Group III nitride semiconductor light emitting device,...

2007-03-23

2011-11-01

Sandvik, Benjamin (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

C257S098000, C257S101000, C257S103000, C438S022000, C438S029000, C438S045000

Reexamination Certificate

active

08049227

ABSTRACT:
A group III nitride semiconductor light emitting device with a double sided electrode structure which has a low driving voltage as well as excellent light emission efficiency is provided, and the group III nitride semiconductor light emitting device includes at least an impurity layer30composed of a high concentration layer3bmade of a group III nitride semiconductor containing high concentration of impurity atoms, and a low concentration layer3amade of a group III nitride semiconductor containing impurity atoms whose concentration is lower than that of the high concentration layer3b; and a group III nitride semiconductor layer2, and the lower concentration layer3aand the high concentration layer3bare continuously formed on the group III nitride semiconductor layer2in this order to form the group III nitride semiconductor light emitting device.

REFERENCES:
patent: 6455340 (2002-09-01), Chua et al.
patent: 7183584 (2007-02-01), Futagawa
patent: 2005/0179045 (2005-08-01), Ryu et al.
patent: 2008/0230800 (2008-09-01), Bandoh et al.
patent: 55-3834 (1980-01-01), None
patent: 2000-332364 (2000-11-01), None
patent: 2001-320085 (2001-11-01), None
patent: 2002-094112 (2002-03-01), None
patent: 2003-142730 (2003-05-01), None
patent: 2003-142730 (2003-05-01), None
patent: 2003-229645 (2003-08-01), None
patent: 2003-234542 (2003-08-01), None
patent: 2005-229085 (2005-08-01), None
patent: WO 2005/104251 (2005-11-01), None

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