Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Ii-vi compound
Reexamination Certificate
2005-06-14
2005-06-14
Le, Thao P. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
Ii-vi compound
C438S604000
Reexamination Certificate
active
06906351
ABSTRACT:
A layered article and method for forming the same includes a single crystal silicon substrate, a silicon oxynitride layer (SixNyOz) disposed on the silicon substrate, and a single crystal GaN layer disposed on the oxynitride layer. The silicon oxynitride layer can be formed by nitridation of a native oxide layer. One or more integrated electronic circuits and/or integrated optical or optoelectronic devices can be built on the article.
REFERENCES:
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Anderson Timothy J.
Kryliouk Olga
Mastro Michael Anthony
Akerman & Senterfitt
Le Thao P.
University of Florida Research Foundation Inc.
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