Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular dopant concentration or concentration profile
Reexamination Certificate
2009-01-19
2011-10-04
Louie, Wai Sing (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular dopant concentration or concentration profile
C257S098000, C257S102000, C257S103000, C257SE33001
Reexamination Certificate
active
08030681
ABSTRACT:
A group III nitride substrate in one embodiment has a surface layer. The surface layer contains 3 at. % to 25 at. % of carbon and 5×1010atoms/cm2to 200×1010atoms/cm2of a p-type metal element. The group III nitride substrate has a stable surface.
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Drinker Biddle & Reath LLP
Louie Wai Sing
Sumitomo Electric Industries Ltd.
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