Group III nitride substrate, semiconductor device comprising...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular dopant concentration or concentration profile

Reexamination Certificate

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C257S098000, C257S102000, C257S103000, C257SE33001

Reexamination Certificate

active

08030681

ABSTRACT:
A group III nitride substrate in one embodiment has a surface layer. The surface layer contains 3 at. % to 25 at. % of carbon and 5×1010atoms/cm2to 200×1010atoms/cm2of a p-type metal element. The group III nitride substrate has a stable surface.

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K.T. Liu et al., “C and N co-implantation in Be-doped GaN”, Semiconductor Science and Technology, vol. 20, pp. 740-744, Jun. 2005.

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