Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Reexamination Certificate
2006-01-27
2009-12-08
Phung, Anh (Department: 2824)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
C257S097000, C257S103000, C257SE33028, C257SE33034
Reexamination Certificate
active
07629619
ABSTRACT:
A Group III nitride-based compound semiconductor light-emitting device having a quantum well structure, includes a well layer, a first layer formed on one surface of the well layer, a second layer formed on the other surface of the well layer, a first region provided in the vicinity of the interface between the first layer and the well layer, and a second region provided in the vicinity of the interface between the second layer and the well layer. A composition of the first and second regions gradually changes such that the lattice constants of the first and second layers approach the lattice constant of the well layer as a position approaches said well layer.
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Chinese Office Action dated Aug. 3, 2007, with partial English translation.
Aoki Masato
Narukawa Mitsuhisa
Nishijima Kazuki
Okuno Koji
Taki Tetsuya
Bernstein Allison P
McGinn IP Law Group PLLC
Phung Anh
Toyota Gosei Co., Ltd.
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