Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2007-11-27
2007-11-27
Prenty, Mark V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C257S077000
Reexamination Certificate
active
11313967
ABSTRACT:
The present invention provides a group III-nitride light emitting device improved in operating voltage and electrostatic discharge characteristics. The group III-nitride light emitting device comprises a lower n-type clad layer, a current spreading layer, an upper n-type clad layer, an active layer and an p-type clad layer formed in their order on a substrate. The current spreading layer includes a SiC layer.
REFERENCES:
patent: 6593597 (2003-07-01), Sheu
patent: 6720570 (2004-04-01), Lee et al.
patent: 10-135514 (1998-05-01), None
Kang Joong Seo
Shim Hyun Wook
Won Jong Hak
Yoon Suk Kil
McDermott Will & Emery LLP
Prenty Mark V.
Samsung Electro-Mechanics Co. Ltd.
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