Group III nitride semiconductor light-emitting device and...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction

Reexamination Certificate

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C257S096000, C257S097000, C257S103000, C257SE33003, C257SE33025

Reexamination Certificate

active

07495261

ABSTRACT:
A Group III nitride semiconductor light-emitting device includes a stacked structure11formed on a crystal substrate (100) to be removed from it and including two Group III nitride semiconductor layers104and106having different electric conductive types and a light-emitting layer105which is stacked between the two Group III nitride semiconductor layers and which includes a Group III nitride semiconductor, and a plate body111made of material different from that of the crystal substrate and formed on a surface of an uppermost layer which is opposite from the crystal substrate that is removed from the stacked structure.

REFERENCES:
patent: 7112826 (2006-09-01), Motoki et al.
patent: 2004/0072383 (2004-04-01), Nagahama et al.
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patent: 2003-243302 (2003-08-01), None
patent: 2003-309289 (2003-10-01), None
patent: WO 03/034508 (2003-04-01), None
J.A. Duffy; “General Inorganic Chemistry”; Hirokawa Publishing Co., Ltd.; First Edition Published Apr. 1, 1967; pp. 247-249, partial translation.

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