Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Reexamination Certificate
2005-03-17
2009-02-24
Ngo, Ngan (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
C257S096000, C257S097000, C257S103000, C257SE33003, C257SE33025
Reexamination Certificate
active
07495261
ABSTRACT:
A Group III nitride semiconductor light-emitting device includes a stacked structure11formed on a crystal substrate (100) to be removed from it and including two Group III nitride semiconductor layers104and106having different electric conductive types and a light-emitting layer105which is stacked between the two Group III nitride semiconductor layers and which includes a Group III nitride semiconductor, and a plate body111made of material different from that of the crystal substrate and formed on a surface of an uppermost layer which is opposite from the crystal substrate that is removed from the stacked structure.
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J.A. Duffy; “General Inorganic Chemistry”; Hirokawa Publishing Co., Ltd.; First Edition Published Apr. 1, 1967; pp. 247-249, partial translation.
Kusunoki Katsuki
Mitani Kazuhiro
Udagawa Takashi
Ngo Ngan
Showa Denko K.K.
Sughrue & Mion, PLLC
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