Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
Reexamination Certificate
2007-06-26
2007-06-26
Huynh, Andy (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular semiconductor material
C257S103000, C257S013000, C257SE33030
Reexamination Certificate
active
11315150
ABSTRACT:
The invention provides a group III-nitride light emitting device having improved external quantum efficiency and brightness. The light emitting device comprises an n-type clad layer, an active layer and a p-type clad layer formed in their order. Also, a p-electrode is formed on the p-type clad layer, wherein the p-electrode comprises CuInO2layer, a transparent conductive oxide layer and a reflective metal layer sequentially formed on the p-type clad layer. The reflective metal layer may be an Ag layer or an Al layer.
REFERENCES:
patent: 6445011 (2002-09-01), Hirano et al.
patent: 2005/0139825 (2005-06-01), Song et al.
Chae Seung Wan
Ro Jae Chul
Shim Hyun Wook
Yoon Suk Kil
Huynh Andy
Nguyen Thinh T
Samsung Electro-Mechanics Co. Ltd.
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