LandOfFree - US Patents - Listing for Active solid-state devices (e.g., transistors, solid-state diode,With means to increase breakdown voltage threshold

Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – In integrated circuit

High withstand voltage semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – In integrated circuit

High withstand voltage semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – Field relief electrode

High-value integrated circuit resistor

Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – Field relief electrode

High-voltage bipolar transistor utilizing field-terminated bond-

Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – Field relief electrode

High-voltage periphery

Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – In integrated circuit

High-voltage PMOS transistor

Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – Reverse-biased pn junction guard region

High-voltage semiconductor device with integrated edge structure

Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – In integrated circuit

Integrated circuit diode, and method for fabricating same

Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – Field relief electrode

Integrated circuit screen arrangement and a method for its manuf

Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – With electric field controlling semiconductor layer having a...

Integrated circuit with a PN junction diode

Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold

Integrated circuit with improved reverse bias breakdown

Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – In integrated circuit

Interacting current spreader and junction extender to...

Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – Field relief electrode

Intergrated high-voltage resistor including field-plate layers

Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – Field relief electrode

Junction-isolated high-voltage MOS integrated device

Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – In integrated circuit

Lateral conduction superjunction semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold

Lateral device with improved conductivity and blocking control

Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – In integrated circuit

Lateral DMOS transistor having reduced surface field

Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – With electric field controlling semiconductor layer having a...

Lateral epitaxial GaN metal insulator semiconductor field...

Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – In integrated circuit

Lateral high-voltage devices with optimum variation lateral...